Physical properties of InxGa1-xAs crystals irradiated by fast electrons

In the work influence of electron irradiation on InxCa1-xAs (x=0.01, 0.02, 0.03) crystals physical properties were studied. Irradiation was carried out on the ELU-6 accelerator by fast electrons with energy E=6 MeV and dose 1016-1017 el/cm2 at 300 K. With radiation dose growth the charge carriers concentration is growing, and this is explained by the point defects generation. In this time the Hall coefficient is increasing more sharply than and this leads to electric conductivity growth. The change of the Hall coefficient and electric conductivity under electron irradiation partially compensate each other, and in the result the Hall electron mobility is a little changing. Thermal conductivity of the InxCa1-xAs with radiation dose increase under low GaAs content is decreasing, and under high content a thermal conductivity is increasing. It is suggested, that this related with different damages of indium arsenide lattice damages under irradiation