Published October 2021 | Version v1
Journal article

Laser annealing of epitaxial CaF2 films on Si

  • 1. Novosibirsk State University, 630090, Novosibirsk (Russian Federation)
  • 2. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentiev aven., Novosibirsk, 630090 (Russian Federation)
  • 3. Department of Radiophysics and Computer Science, Belarus State University, 4 Nezavisimosti aven., 220030, Minsk (Belarus)

Description

Highlights: • Pulsed laser annealing of the CaF2/Si(111) film leads to morphology changes. • Round-shaped nanohills are formed on the epitaxial film. • The nanohills contain cavities filled with Si2F6 gas. Nanosecond time-resolved reflectivity and transmission changes in CaF2/Si(111) structures were measured to study the phase transitions, surface modification and radiolysis induced by nanosecond ruby laser pulses. The Si lattice heating up to the melting point leads to the nanohills formation on the surface of the structure, the height of which does not exceed 100 nm with the average base diameter of 360 nm and the surface density of 2• 108cm– 2. The Raman scattering and energy-dispersive X-ray spectroscopy data indicate that the nanohills contain cavities inside them, and they are filled with the gas of Si2F6 molecules. The shell of the nanohills, obviously, consists of calcium oxide.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2021.138898

Additional details

Identifiers

DOI
10.1016/j.tsf.2021.138898;
PII
S0040609021003813;

Publishing Information

Journal Title
Thin Solid Films (Print)
Journal Volume
735
Journal Page Range
vp.
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.