Published December 15, 1983
| Version v1
Journal article
Characterisation of a new batch of ion implanted Bi in silicon specimens for use as primary reference surface standards
- 1. Commission of the European Communities, Geel (Belgium). Central Bureau for Nuclear Measurements
Description
A set of 100 silicon specimens has been prepared with a nominal implanted dose of 5x1015Bi atoms cm-2. The samples have been analysed by Rutherford backscattering. The lateral uniformity of the bismuth implantation has been tested by the intercomparison of all samples. Absolute calibration for six of the samples has been achieved by comparison with carefully deposited thin films. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res.
- Journal Volume
- 218
- Journal Issue
- 1-3
- Series
- Nucl. Instrum. Methods Phys. Res.
- Journal Page Range
- 91-96
- ISSN
- 0167-5087
Conference
- Title
- 6. international conference on ion beam analysis (IBA-6).
- Dates
- 23-27 May 1983.
- Place
- Tempe, AZ (USA).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 15047813
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BACKSCATTERING; BISMUTH ADDITIONS; CALIBRATION STANDARDS; EXPERIMENTAL DATA; FILMS; ION IMPLANTATION; RUTHERFORD SCATTERING; SILICON
- Descriptors DEC
- DATA; ELASTIC SCATTERING; ELEMENTS; INFORMATION; NUMERICAL DATA; SCATTERING; SEMIMETALS