Published June 1, 1989
| Version v1
Journal article
Localized states in crystalline semiconductors
Description
Hopping conduction is studied in crystalline Si, Ge, InSb, GaAs, and InAs. Sufficient degree of damage induced by electron irradiation allows the observation of conductance by nearest neighbour hopping, or variable range hopping. Evidence of electron-electron interaction in the hopping conductance is presented. (author)
Additional details
Publishing Information
- Journal Title
- Physica Status Solidi B
- Journal Volume
- 153
- Journal Issue
- 2
- Series
- Phys. Status Solidi B.
- Journal Page Range
- 675-681
- ISSN
- 0370-1972
- CODEN
- PSSBB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 21009826
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- AC LOSSES; ACTIVATION ENERGY; ALTERNATING CURRENT; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON-ELECTRON INTERACTIONS; ENERGY LEVELS; GALLIUM ARSENIDES; GERMANIUM; INDIUM ANTIMONIDES; INDIUM ARSENIDES; MEV RANGE 01-10; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTALS; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; ENERGY LOSSES; ENERGY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERACTIONS; LEPTON BEAMS; LEPTON-LEPTON INTERACTIONS; MATERIALS; METALS; MEV RANGE; PARTICLE BEAMS; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SEMIMETALS