Published February 16, 1982
| Version v1
Journal article
Chain annihilation of defects in semiconductor crystals
- 1. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki, Ehlektroniki i Avtomatiki
Description
A mechanism is suggested which can explain the annealing of imperfect crystals (Si and GaAs) at low irradiation doses. It is based on the chain process of annihilation of Frenkel pairs caused by radiation. The conditions for realization of this chain process are investigated considering two basic problems: (1) dissipation of the annihilation energy in the crystal, and (2) dynamics of annihilation of point defects in the dissipation process
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 69
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K215-K218
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13697493
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANNIHILATION; ELECTRON BEAMS; FRENKEL DEFECTS; GALLIUM ARSENIDES; GAMMA RADIATION; LOW DOSE IRRADIATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INTERACTIONS; IONIZING RADIATIONS; IRRADIATION; LEPTON BEAMS; PARTICLE BEAMS; PARTICLE INTERACTIONS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- Short note.