Reducing-atmosphere resistant mechanism on microwave dielectric enhancement of CaMgSi2O6 glass-ceramics
- 1. Department of Mechanical Engineering, Ming Chi University of Technology, New Taipei City, 24301 (China)
- 2. Department of Physics, Fu Jen Catholic University, New Taipei City, 24205 (China)
- 3. Department of Mechanical Engineering, Hwa Hsia University of Technology, New Taipei City, 23567 (China)
Description
Highlights: • This work highlights a reducing-atmosphere resistance using amphoteric ion doping. • Al2O3 plays both donor and acceptor roles in CaMgSi2O6 glass ceramics. • Al2O3 doping could reduce defects and enhance microwave dielectric properties. • This work can provide an approach for the base-metal-electrode in LTCC or MLCC. This work highlights a reducing-atmosphere resistance using amphoteric ion doping to reduce defects and to enhance microwave dielectric properties in CaMgSi2O6 glass-ceramics. Amphoteric Al3+ ion (Al2O3 doping) was selected with both donor and acceptor roles to restrict free electrons and oxygen vacancies in specimens sintered in reducing atmosphere. The X-ray absorption and X-ray photoelectron spectra indicate decreased oxygen vacancies and a valence shift from a mixture of Si2+ and Si3+ to Si4+ in the Al3+–doped CaMgSi2O6 glass-ceramics sintered in reducing-atmosphere. The amphoteric Al3+ ion plays an acceptor role as entering Si4+ site to form oxygen vacancies, meanwhile Al3+ plays a donor role as entering Mg2+ site to compensate free electrons. The amphoteric Al–doped diopside glass-ceramic can increase the electric resistivity and quality factors. This work can provide an efficient approach for the base-metal-electrode (BME) in low-temperature co-fired ceramics (LTCC) and multilayer ceramic capacitors (MLCC).
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2018.06.174Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2018.06.174;
- PII
- S0925838818322953;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 765
- Journal Page Range
- p. 75-81
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54054821
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ALUMINIUM OXIDES; CALCIUM COMPOUNDS; CERAMICS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; GLASS; LAYERS; MAGNESIUM COMPOUNDS; MICROWAVE RADIATION; QUALITY FACTOR; SILICATES; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; SILICON COMPOUNDS; SORPTION; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2018 Published by Elsevier B.V.