Published December 2013
| Version v1
Journal article
Semiconductor plasmonic crystals: active control of THz extinction
Creators
- 1. Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG, Amsterdam (Netherlands)
Description
We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/28/12/124003Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 28
- Journal Issue
- 12
- Journal Page Range
- [7 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46082392
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- APPROXIMATIONS; CHARGE CARRIERS; CRYSTALS; DENSITY; DIPOLES; DOPED MATERIALS; GALLIUM ARSENIDES; OPTICAL PUMPING; PERIODICITY; POLARONS; RESONANCE; SCATTERING; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; GALLIUM COMPOUNDS; MATERIALS; MULTIPOLES; PHYSICAL PROPERTIES; PNICTIDES; PUMPING; QUASI PARTICLES; VARIATIONS