Published December 2013 | Version v1
Journal article

Semiconductor plasmonic crystals: active control of THz extinction

  • 1. Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG, Amsterdam (Netherlands)

Description

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/28/12/124003

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
28
Journal Issue
12
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET