Effects of static magnetic fields on rf-driven plasma sheaths
Creators
- 1. Science Applications International Corporation, McLean, Virginia 22102 (United States)
Description
The physics of sheath formation during rf capacitor discharges in magnetized plasmas is examined, for arbitrary angle between the dc magnetic field and the oscillating rf electric field. Observations from particle simulations show that the induced dc sheath potential under given rf drive increases with increasing angle between the electric and magnetic fields, reaching a maximum nearly twice the unmagnetized dc potential for nearly perpendicular E and B. Analytic study of the ion dynamics in the time-averaged sheath field reveals that the ion motion is unstable, yielding unbound ion transport across the magnetic lines. The effective ion mass m*, employed for the acceleration along the electric field, is obtained as a function of the magnetic angle and the relative magnetic strength. The magnetized presheath ions are partially demagnetized inside the sheath. The ratio of the effective masses mB/m*, where mB stands for fully magnetized ions, parametrizes the sheath potential and sheath thickness. The sheaths behave as unmagnetized in the limit of parallel E and B. copyright 1996 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Physics of Plasmas
- Journal Volume
- 3
- Journal Issue
- 7
- Journal Page Range
- p. 2511-2522.
- ISSN
- 1070-664X
- CODEN
- PHPAEN
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27079894
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- BOUNDARY LAYERS; CAPACITORS; ELECTRIC DISCHARGES; MAGNETIC FIELDS; PLASMA DRIFT; PLASMA POTENTIAL; PLASMA SHEATH; PLASMA SIMULATION; RADIOWAVE RADIATION; WALL EFFECTS
- Descriptors DEC
- ELECTRIC POTENTIAL; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ENERGY STORAGE SYSTEMS; EQUIPMENT; LAYERS; RADIATIONS; SIMULATION