Published 2001 | Version v1
Miscellaneous Metadata-only

The growth of Bi and Ga substituted YIG and LuIG layers by LPE method

Creators

  • 1. Research Institute for Technical Physics and Materials Science, Budapest (Hungary)

Description

no abstract available

Part of:
Abstracts of 6. Polish Conference on Crystal Growth

Additional details

Publishing Information

Imprint Title
Abstracts of 6. Polish Conference on Crystal Growth
Imprint Pagination
120 p.
Journal Page Range
p. 51

Conference

Title
6. Polish Conference on Crystal Growth
Dates
20-23 May 2001
Place
Poznan (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33034038
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
BISMUTH ADDITIONS; CHEMICAL COMPOSITION; DOPED MATERIALS; ELLIPSOMETRY; GALLIUM ADDITIONS; GALLIUM COMPOUNDS; IRON COMPOUNDS; KINETICS; LIQUID PHASE EPITAXY; LUTETIUM COMPOUNDS; MAGNETIZATION; OXIDES; REFRACTIVE INDEX; SUPERSATURATION; THICKNESS; THIN FILMS; YTTRIUM COMPOUNDS
Descriptors DEC
ALLOYS; BISMUTH ALLOYS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; EPITAXY; FILMS; GALLIUM ALLOYS; MAGNETIC MOMENTS; MATERIALS; MEASURING METHODS; OPTICAL PROPERTIES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SATURATION; TRANSITION ELEMENT COMPOUNDS

Optional Information

Contract/Grant/Project number
HSRF grant no. T-026153