Photoassisted chemical solution deposition method for fabricating uniformly epitaxial VO2 films

Epitaxial VO2 films were prepared on the TiO2 (001) substrates by the excimer-laser-assisted metal-organic deposition (ELAMOD). The quality of the epitaxial films obtained by irradiation with a KrF laser was found to be affected by the film structure obtained after preheating at 500 or 300 C. When the films containing crystal domains, which were obtained by preheating at 500 C, were irradiated with the laser at room temperature under a base pressure of 250 Pa, epitaxial and polycrystalline VO2 phases were simultaneously formed. In contrast, when the amorphous films containing organic components, which were obtained by preheating at 300 C, were irradiated with the laser at room temperature in air, a single phase of epitaxial VO2 was formed. By using thermal simulations, we determined that the formation of the epitaxial phase was affected both by the temperature distribution within the film during the laser irradiation and by the laser intensity at the interface between the substrate and the film. The latter factor is considered to play a role in the nucleation of crystallization, causing the epitaxial phase to form preferentially compared to the polycrystalline phase in the amorphous matrix of the films. These results indicate that the ELAMOD process is effective for the fabrication of epitaxial VO2 films at low temperature. (orig.)