Published 1977 | Version v1
Journal article

Sputtering erosion, apparent growth and equilibrium of triangular microprofiles submitted to ion bombardment at oblique incidence

Creators

  • 1. Institutul de Fizica Atomica, Bucharest (Romania)

Description

A simple approach for the evaluation of bombardment time (dose) necessary for a verifiable modification of relative height (depth) of a triangular microprofile submitted to oblique incidence sputtering is proposed. Using different incidence planes it is possible to show that in various angular ranges (phi, thetasub(m)) the relative height (depth) decreases (sputtering erosion), increases (sputtering growth) or remains constant (equilibrium microprofile). This approach is equivalent with other three previous models developed for the prediction of ion sputtered equilibrium microtopography and some graphic methods based on erosion slowness curves are suggested in connection to this approach. Some experimental results have been found in good agreement with those analytically predicted. (author)

Additional details

Publishing Information

Journal Title
Rev. Roum. Phys.
Journal Volume
22
Journal Issue
5
Series
Rev. Roum. Phys.
Journal Page Range
523-536

INIS

Country of Publication
Romania
Country of Input or Organization
Romania
INIS RN
10442880
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EROSION; ION BEAMS; MICROSTRUCTURE; SOLIDS; TRIANGULAR CONFIGURATION
Descriptors DEC
BEAMS; CONFIGURATION; CRYSTAL STRUCTURE