Sputtering erosion, apparent growth and equilibrium of triangular microprofiles submitted to ion bombardment at oblique incidence
Description
A simple approach for the evaluation of bombardment time (dose) necessary for a verifiable modification of relative height (depth) of a triangular microprofile submitted to oblique incidence sputtering is proposed. Using different incidence planes it is possible to show that in various angular ranges (phi, thetasub(m)) the relative height (depth) decreases (sputtering erosion), increases (sputtering growth) or remains constant (equilibrium microprofile). This approach is equivalent with other three previous models developed for the prediction of ion sputtered equilibrium microtopography and some graphic methods based on erosion slowness curves are suggested in connection to this approach. Some experimental results have been found in good agreement with those analytically predicted. (author)
Additional details
Publishing Information
- Journal Title
- Rev. Roum. Phys.
- Journal Volume
- 22
- Journal Issue
- 5
- Series
- Rev. Roum. Phys.
- Journal Page Range
- 523-536
INIS
- Country of Publication
- Romania
- Country of Input or Organization
- Romania
- INIS RN
- 10442880
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EROSION; ION BEAMS; MICROSTRUCTURE; SOLIDS; TRIANGULAR CONFIGURATION
- Descriptors DEC
- BEAMS; CONFIGURATION; CRYSTAL STRUCTURE