Growth behavior of β-Ga₂O₃ nanowires synthesized by chemical vapor deposition

Gallium oxide (Ga₂O₃) nanowires deposited on Si substrates were synthesized by chemical vapor deposition (CVD) of Ga powders with assisted catalyzed by nickel chloride (NiCl₂). The microstructure of these nanowires was investigated using high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Four major types of morphology were observed for these Ga₂O₃ nanomaterials, namely, the particle-fused nanowires, single-crystal nanowires, nanorods and core–shell nanowires. Single crystal and core–shell nanowires were mainly studied. EELS indicated that the amorphous shell was Ga₂O₃. Because metal catalysts were introduced in the growth process, a vapor-solid (VS) growth mechanism was proposed to explain the single crystal Ga₂O₃ nanowires. (paper)