Temperature and angular effects on the channelled implantation of Er into Si<1 1 1>

High dose (∼1x1017/cm2) channelled implantation of Er into Si along the <1 1 1> direction has been investigated. These doses are suitable for channelled ion beam synthesis (CIBS) of ErSi1.7 layers. A study of the influence of the implantation temperature between 470-800 deg. C and the effect of the angle up to ±5 deg. from the <1 1 1> direction has been carried out. Increasing the temperature results in significant improvements in the as-implanted material. The optimal temperature range is 600-700 deg. C. Higher temperatures result in diffusion of the implanted Er to the surface where it is sputtered away by the incoming ions. Comparison of the experimental angular dependence with simulations and theory shows good agreement. Implantations at <4 deg. from the channelling direction form a continuous silicide layer after annealing