Structural investigation of CdSSe-nanocrystals synthesized by ion-beam-implantation

II-VI semiconductor nanoparticle systems can be prepared by keV high-dose ion implantation and subsequent thermal annealing. The ternay Cd-S-Se system offers an additional degree of freedom to adjust materials properties, as Se and S are completely miscible on the Se sublattice. X-ray diffraction analysis indicates, that hexagonal CdS xSe1-x nanocrystals are formed after rapid thermal annealing. Peak positions are evaluated using Vegard's law. Material loss is monitored quantitatively by Rutherford backscattering spectroscopy (RBS). Cross-sectional TEM images are revealing strong influence of the composition on the nanocrystal structural evolution