Published May 1986
| Version v1
Journal article
Stoichiometry of thin layers of CuInSe2 investigated by ESCA
Creators
- 1. Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie
Description
The stoichiometry of thin epitaxial layers of CuInSe2 on CaF2 and GaAs substrates was determined by the ESCA method. Substrate temperature was varied. It was found, that layers of exact stoichiometry are got at substrate temperatures around 700 K. (author)
Additional details
Publishing Information
- Journal Title
- Cryst. Res. Technol.
- Journal Volume
- 21
- Journal Issue
- 5
- Series
- Cryst. Res. Technol.
- Journal Page Range
- 595-600
- ISSN
- 0232-1300
- CODEN
- CRTED
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17067777
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- BINDING ENERGY; CALCIUM FLUORIDES; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; COPPER SELENIDES; DEPTH; ELECTRON SPECTROSCOPY; EPITAXY; FILMS; GALLIUM ARSENIDES; HIGH TEMPERATURE; INDIUM SELENIDES; MEDIUM TEMPERATURE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CALCIUM COMPOUNDS; CALCIUM HALIDES; CHALCOGENIDES; COPPER COMPOUNDS; DIMENSIONS; ENERGY; FLUORIDES; FLUORINE COMPOUNDS; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; SELENIDES; SELENIUM COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS