Published February 2011 | Version v1
Journal article Metadata-only

Optical gain of multi-stacked InAs quantum dots grown on InP(311)B substrate by strain-compensation technique

Creators

  • 1. School of Engineering, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan)
  • 2. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan)
  • 3. National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

Description

We used a strain-compensation technique to fabricate multi-stacked InAs quantum dot (QD) structures on InP(311)B substrates. We stacked 60 layers of InAs QDs without degrading the crystal quality and achieved a structure with a total QD density of 4.9 x 1012 cm-2. Then dependence of optical gain on the number of QD layers stacked was investigated, using variable stripe-length (VSL) method. The optical gain increased with increase in the number of QD layers. We obtained an optical gain of 49.7 cm-1 when 60 QD layers were stacked. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201000502

Additional details

Identifiers

DOI
10.1002/pssc.201000502;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
8
Journal Issue
2
Journal Page Range
p. 254-256
ISSN
1610-1642

Conference

Title
37. international symposium on compound semiconductors (ISCS 2010)
Dates
31 May - 4 Jun 2010
Place
Kagawa (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
42032771
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DENSITY; ELECTRON DIFFRACTION; EMISSION SPECTRA; GAIN; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; QUANTUM DOTS; STRAINS; SUBSTRATES; SURFACES
Descriptors DEC
ALUMINIUM COMPOUNDS; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; PUMPING; SCATTERING; SPECTRA

Optional Information

Notes
With 5 figs., 14 refs.