High performance FETs based on ZnO nanowires synthesized by low cost methods

Single ZnO nanowires prepared by wet and dry methods are used as channels in high performance back-gated field effect transistors working in low power operation mode, with on–off ratios up to 10⁵ and mobilities up to 167 cm² V⁻¹ s⁻¹. The nanowires' properties, generated by the growth techniques, influence the parameters of the transistors, therefore a throughout comparison is made. (paper)