Cu-doping effects on the physical properties of cadmium sulfide thin films

Highlights: ► CdS thin films were grown by CSS. ► By ion exchange, Cu was doped. ► Physical properties were investigated. - Abstract: Thin films of CdS were fabricated by close spaced sublimation technique under vacuum of ∼10−5 mbar at a source temperature of 550 °C for various periods of time. These as-deposited thin films were immersed into Cu (NO3)2 solution at 80 ± 5 °C for variety of time to ensure Cu doping. The structural, surface, optical and electrical analyses were completed with the help of X-Ray Diffraction, Scanning Electron Microscope with Energy Dispersive X-Ray, UV-VIS-NIR Spectrophotometer and Hall Measurement System respectively. The transmittance of as-deposited sample is reduced from 80% to 30% with increasing copper immersion time. The mobility increased from 6.67 × 101 to 1.15 × 103 cm2/Vs due to the change in the carrier concentration.