Published November 21, 2014
| Version v1
Journal article
Magneto-transport properties of a random distribution of few-layer graphene patches
Creators
- 1. Laboratoire National des Champs Magnétiques Intenses, University of Toulouse, UPS, INSA, CNRS-UPR 3228, 143 av. de Rangueil, F-31400 Toulouse (France)
- 2. Laboratoire de Génie Chimique, ENSIACET/INP de Toulouse, UMR CNRS 5503, 4 allée Emile Monso, 31432 Toulouse (France)
- 3. University of Toulouse, LAAS, F-31400 Toulouse (France)
- 4. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France)
Description
In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime
Additional details
Identifiers
- DOI
- 10.1063/1.4901953;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 116
- Journal Issue
- 19
- Journal Page Range
- p. 193705-193705.7
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46108421
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; EQUIPMENT; FILMS; GRAPHENE; LAYERS; MAGNETIC FIELDS; QUANTIZATION; RANDOMNESS
- Descriptors DEC
- CARBON; ELEMENTS; HEAT TREATMENTS; NONMETALS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC