Published November 21, 2014 | Version v1
Journal article

Magneto-transport properties of a random distribution of few-layer graphene patches

  • 1. Laboratoire National des Champs Magnétiques Intenses, University of Toulouse, UPS, INSA, CNRS-UPR 3228, 143 av. de Rangueil, F-31400 Toulouse (France)
  • 2. Laboratoire de Génie Chimique, ENSIACET/INP de Toulouse, UMR CNRS 5503, 4 allée Emile Monso, 31432 Toulouse (France)
  • 3. University of Toulouse, LAAS, F-31400 Toulouse (France)
  • 4. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France)

Description

In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
116
Journal Issue
19
Journal Page Range
p. 193705-193705.7
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46108421
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANNEALING; EQUIPMENT; FILMS; GRAPHENE; LAYERS; MAGNETIC FIELDS; QUANTIZATION; RANDOMNESS
Descriptors DEC
CARBON; ELEMENTS; HEAT TREATMENTS; NONMETALS

Optional Information

Notes
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