Published February 1, 2010 | Version v1
Journal article

Exciton-formation time obtained from the spin splitting dynamics

  • 1. Institute of Semiconductor Physics, Pr. Lavrentieva, 13, 630090 Novosibirsk (Russian Federation)
  • 2. SEMICUAM. Department Fisica de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain)

Description

We present a new experimental method to obtain the exciton-formation time based on the detection of the zero-magnetic field energy splitting between excitons with spins +1 and -1 created by circularly polarized light. The splitting is proportional to the product of the exciton circular-polarization degree ρ and density n. The dynamics of the exciton density n can be therefore obtained from the values of splitting and ρ. We investigate the exciton formation dynamics in high purity bulk GaAs and Al0.15Ga0.85As samples at excitation densities 6x1014 - 3x1017 cm-3 and obtain the exciton-formation time, which is found to vary from 70 ps to 360 ps.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/210/1/012002

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
210
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
11. international conference on optics of excitons in confined systems
Acronym
OECS11
Dates
7-11 Sep 2009
Place
Madrid (Spain)

INIS