Investigation of the origin of deep levels in CdTe doped with Bi
Creators
- 1. Material Physic Department, Universidad Autonoma de Madrid, Ctra. Colmenar km 14, 28049 Madrid (Spain)
- 2. Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, CZ 121 16 Prague (Czech Republic)
- 3. IRDEP, Institute of Research and Development of Photovoltaic Energy (UMR 7174, CNRS/EDF/ENSCP), 6 Quai Watier, BP 49, 78401 Chatou cedex (France)
- 4. Instituto de Microelectronica de Madrid-CNM-CSIC, c/Isaac Newton 8 (PTM), Tres Cantos, 28760 Madrid (Spain)
Description
Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017-1019 at./cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples
Additional details
Identifiers
- DOI
- 10.1063/1.2903512;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 103
- Journal Issue
- 9
- Journal Page Range
- p. 094901-094901.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40017907
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH; CADMIUM TELLURIDES; CRYSTAL DEFECTS; DOPED MATERIALS; LATTICE PARAMETERS; PHOTOLUMINESCENCE; RECOMBINATION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; THERMOELECTRICITY; X-RAY DIFFRACTION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRICITY; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; METALS; PHOTON EMISSION; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics