Published September 2018 | Version v1
Journal article

First principle study of tritium trapping at oxygen vacancies in Li4SiO4

  • 1. Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China)
  • 2. Department of Physics and Key Laboratory for Radiation Physics & Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China)
  • 3. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064 (China)

Description

Highlights: • The neutral and 2 + charged oxygen vacancies are diamagnetic and most stable. • The 1 + charged oxygen vacancies are paramagnetic and less stable. • Tritium is trapped in the O vacancy if the defect complex is 1+/2+/3 + charged. • Trapped tritium forms a T-SiO3 unit. • Tritium tends to escape the vacancy if the complex is neutral or 1- charged.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jnucmat.2018.05.055

Additional details

Identifiers

DOI
10.1016/j.jnucmat.2018.05.055;
PII
S002231151731365X;

Publishing Information

Journal Title
Journal of Nuclear Materials
Journal Volume
508
Journal Page Range
p. 257-264
ISSN
0022-3115
CODEN
JNUMAM

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.