Published June 4, 2024 | Version v1
Journal article

Efficient terahertz emission from R-plane α-Fe2O3/Pt

  • 1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016, India
  • 2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

Description

We report on the generation of ultrafast spin currents through femtosecond laser excitation of epitaxial bilayer thin films comprising αFe2O3 (an insulating antiferromagnet) and Pt (a heavy metal). The epitaxial thin films of αFe2O3 were simultaneously grown in three distinct orientations, namely, R, A, and C planes, employing pulsed laser deposition. By using the R plane αFe2O3, we demonstrate a substantial enhancement of the THz signal, nearly one order of magnitude greater compared to the A and C planes αFe2O3/Pt. We perform a detailed investigation into the sample azimuthal and laser polarization dependence of the THz emission. Our investigations establish that the sample azimuthal dependence of THz emission in the αFe2O3/Pt system is linked to the spin domain distribution as well as the crystalline symmetry of the orientation of αFe2O3. These results contribute significantly to understanding the ultrafast dynamics of spin currents in antiferromagnets.

Additional details

Identifiers

DOI
10.1103/PhysRevB.109.224408;
Crossref Funder ID
10.13039/501100004541; 10.13039/501100002183; 10.13039/501100001843; 10.13039/501100007488; 10.13039/501100001412;

Publishing Information

Journal Title
Physical Review B
Journal Volume
109
Journal Issue
22
Journal Page Range
9 pgs.
ISSN
1550-235X

Optional Information

Copyright
©2024 American Physical Society
Contract/Grant/Project number
7519; 7058; CRG/2018/001012; CRG/2022/002821
Notes
These authors contributed equally to this work.; Contact Email: ElbertChia@ntu.edu.sg; Contact Email: muduli@physics.iitd.ac.in; Record automatically processed
Funding organization
Ministry of Education, India; Department of Electronics and Information Technology, Ministry of Communications and Information Technology; Science and Engineering Research Board; Indian Institute of Technology Delhi; Council of Scientific and Industrial Research, India