Electrical properties of CVD molybdenum disulfide

Two dimensional materials are attractive for the use in next-generation nanoelectronic devices as compared to one dimensional material because it is relatively easy to fabricate complex structures from them. Recently the layered 2D semiconducting Transition metal dichalcogenides came into the picture and got a place in a wide range of novel applications as well as in basic research. Strikingly, MoS₂ receives significant attention since it undergoes transition from indirect bandgap (bulk form) to a direct bandgap (1.8 eV) semiconductor due to the 2D confinement. The bandgap is an essential property for tunable 2-D nanodevices. We performed electrical transport measurements at room temperature for CVD grown MoS₂ on SiO₂/Si substrate. Standard Electron beam lithography (EBL) was used to pattern Gold (Au) metal contacts on MoS₂ flakes. For the purpose of sample characterization, we performed the Atomic Force Microscopy (AFM) and Raman Spectroscopy techniques, respectively, which confirm that the thickness of the CVD grown MoS₂ triangular flakes corresponds to single layers. Low temperature characterization of the electrical properties of the layers elucidates the exact mechanisms of charge transport in the 2d-layers. This knowledge will be used to modify the electrical properties in a controlled way, for example by ion irradiation.