Effect of heat treatment and irradiation on oxygen state in silicon

The effect of neutron irradiation followed by annealing at the temperature range from 100 to 560 deg C and heat treatment at 1.000 deg C on absorption by oxygen in silicon has been studied. The absorption is measured at the liquid nitrogen temperature. It is shown that corresponding to oxygen absorption bands are at 1.128 and 1.135 cm-1, they correspond to various oxygen states in a Si lattice. Data are presented on the changes occurring in both absorption bands under the effect of irradiation and annealing. It is assumed that the band at 1.128 cm-1 is due to the oxygen dissolved in a Si lattice, while the band at 1.136 cm-1 is associated with the oxygen present in particles of the second phase of SiO2