Published November 26, 1991 | Version v1
Journal article Metadata-only

Structural changes of ZnSe/GaAs epitaxy films under soft X-ray effect

Creators

  • 1. Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation)

Description

Influence of soft X-ray effect on ZnSe epitaxial films grown on GaAs(100) sublayers is studied. Study of film surface morphology in electron microscope and X-ray diffraction analysis show that monocrystal as well as polycrystal epitaxy layers may be obtained by such a method by different technological growth parameters. Conclusion is made that soft X-ray irradiation leads to structural improvement of epitaxy layer

Additional details

Additional titles

Original title (Russian)
Структурные изменения эпитаксиальной пленки ZnSe/GaAs под действием мягкого рентгеновского излучения

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
17
Journal Issue
22
Journal Page Range
p. 57-61.
ISSN
0320-0116
CODEN
PZTFDD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24021570
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EMISSION SPECTRA; EPITAXY; FILMS; GALLIUM ARSENIDES; HETEROJUNCTIONS; LASER RADIATION; MONOCRYSTALS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POLYCRYSTALS; SOFT X RADIATION; SUBSTRATES; ZINC SELENIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; IONIZING RADIATIONS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTRA; X RADIATION; ZINC COMPOUNDS