Published August 28, 2013 | Version v1
Journal article

UV LEDs for high-current operation

  • 1. GaN-Crystals Ltd., 27 Engels Ave, St. Petersburg 194156 (Russian Federation)
  • 2. Saint-Petersburg Electrotechnical University 'LETI', Prof. Popova 5, St. Petersburg 197376 (Russian Federation)
  • 3. Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)

Description

In this paper we report on results of development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both UV LED heterostructures and packaged dies are investigated. UV LEDs proved performance capability at current density up to 125 A/cm2 and revealed wall-plug efficiency (WPE) of 1.5% at operating current of 20 mA

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/461/1/012028

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
461
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
15. Russian youth conference on physics and astronomy
Acronym
PhysicA.SPb
Dates
23-24 Oct 2012
Place
St. Petersburg (Russian Federation)