Published June 2003 | Version v1
Journal article Metadata-only

Superradiance in quantum heterostructures

Creators

  • 1. NAN Ukrainy, Inst. Fiziki Poluprovodnikov, Kiev (Ukraine)

Description

Changes in the shape of spectra as well as those in dependences of the intensity and the relaxation time of superradiance on the excitation power density ranging between 10-3 and 9 x 106 W/cm2 have been studied in quantum GaAs/InxGa1-xAs/GaAs heterostructures. It is shown for the first time that there is the effect of quantum subbands population on all the parameters of the superradiance spectra. It is found that the following relationship characteristic for superradiance between the relaxation time and the emission intensity 1/τN ∝ √JQW is fulfilled in quantum wells

Abstract (Russian)

В квантовых гетероструктурах GaAs/InxGa1-xAs/GaAs исследованы изменение формы спектра и зависимости интенсивности и времени релаксации сверхизлучения от плотности мощности возбуждения в диапазоне 1 х 10-3 - 9 х 106 Вт/см2. Впервые показано влияние заполнения квантовой ямы на все параметры спектра сверхизлучения. Установлено, что в квантовых ямах выполняется характерная для сверхизлучения взаимосвязь между временем релаксации и интенсивностью излучения 1/τN ∝ √JQW

Additional details

Additional titles

Original title (Russian)
Сверхизлучение в квантовых гетероструктурах

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
37
Journal Issue
6
Journal Page Range
p. 706-710
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
35090432
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BAND THEORY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; QUANTUM WELLS; RELAXATION TIME; SUPERRADIANCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR JUNCTIONS; STIMULATED EMISSION

Optional Information

Notes
12 refs., 5 figs.