Ion channeling analysis of extended-defect annealing in silicon by rapid thermal processes

The Rutherford backscattering/channeling and transmission electron microscopy techniques have been used to investigate the annealing of extended defects in silicon. The damage has been created by implantation of 600 keV Ge ions at a substrate temperature of 250degC. Rapid thermal processes at temperatures above 1000degC have been used for defect removal. The channeling data indicate that the annealing of extended defects is governed by a process with an activation energy of 4.3±0.2 eV. (orig.)