Published December 2013
| Version v1
Miscellaneous
Cultivation and characterization of GaInSe2 crystals
Creators
- 1. Azerbaijan Architecture and Civil Engineering University, Baku (Azerbaijan)
Description
This work is the first systematic study devoted to the growth of GaInSe2 crystals and their characterization by experimental methods such as X-ray diffraction, electron microscopy transmission with high resolution, sample electron diffraction. By the method of photoelectron roentgen spectroscopy it was studied the chemical structure of the GaInSe2 crystals and the microprobe analysis indicated that the individual crystals have an excess of gallium. GaInSe2 crystals were grown by the Bridgman method. Samples were prepared as single crystals by the Bridgman method. Studies showed that the GaInSe2 crystals are hexagonal ones
Availability note (English)
Available from the Institute of Radiation Problems, Baku (AZ)Additional details
Additional titles
- Original title (Russian)
- Вырашивание и характеристика кристаллов GaInSe<суб>2</суб>
Publishing Information
- Publisher
- The printing house of Sumgayit State University
- Imprint Place
- Sumgayit (Azerbaijan)
- Imprint Title
- Microelectronic converters and devices based on them. Materials of the seventh international scientific and technical conference. Devoted to 90th aniversary of Haydar Aliyev
- Imprint Pagination
- 216 p.
- Journal Page Range
- p. 35-37
Conference
- Title
- 7. international scientific and technical conference on microelectronic converters and devices based on them
- Dates
- 27-29 Nov 2013
- Place
- Sumgayit (Azerbaijan)
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 46105617
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature, Numerical Data
- Descriptors DEI
- BRIDGMAN METHOD; CRYSTALS; CULTIVATION; DATA ANALYSIS; ELECTRON DIFFRACTION; EVALUATED DATA; GALLIUM; INDIUM; SAMPLE PREPARATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DATA PROCESSING; DIFFRACTION; ELEMENTS; INFORMATION; MATERIALS; METALS; NUMERICAL DATA; PROCESSING; SCATTERING
Optional Information
- Notes
- 3 figs; 4 refs Imprint:Mikroelektronnye preobrazovateli i pribory na ix osnove. Materialy sedmoy mejdunarodnoy nauchno-texnicheskoy konferentsii. Posvashaetsa 90letiyu Geydara Aliyeva
- Secondary number(s)
- SEC--1