Location of Si-interstitials in radiation damaged Si-crystals with double alignment channeling technique

In a double alignment backscattering channeling experiment the angular dependence (for detector rotation) of helium ions-backscattered from a radiation damaged silicon crystal at room temperature - has been studied. The 1.5 MeV He+ beam was incident on the specimen parallel to <110>, the backscattered ions were registered on plastic films in the blocking directions [110], [010] and [111] and in small angular ranges around these blocking directions. The position of silicon interstitials is discussed by comparing the backscattering yield profiles - obtained as a function of emission angle from the spatial distribution of ion tracks on the plastic films - with calculated yield profiles on the computer simulations. (author)