Published January 1994
| Version v1
Journal article
Unusual annealing behavior of 1.56 MeV Sb+ ion implanted single-crystal silicon
Description
The damage and annealing behavior of 1.56 MeV Sb+ in implanted Si(100) have been studied. The dose range of implantation was 2 x 1013-5 x 1015 Sb+/cm2. The samples were annealed for 30 minutes in flowing Ar gas at temperatures ranging from 500 to 1050 degree C in a conventional furnace tube. The implantation-induced damage and annealing quality of the samples were measured with 3 MeV He+ RBS/channeling and TEM techniques. In addition, a computer simulation of ion implantation damage has been performed with TRIM program. It is concluded that the category of defects is related to ion dose and annealing temperature of samples
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 17
- Journal Issue
- 1
- Journal Page Range
- p. 1-6.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26013954
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ANTIMONY IONS; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; MEV RANGE 01-10; MONOCRYSTALS; RADIATION DOSES; RADIATION EFFECTS; RADIATION SCATTERING ANALYSIS; RUTHERFORD SCATTERING; SILICON; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; CRYSTALS; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; MEV RANGE; MICROSCOPY; NONDESTRUCTIVE ANALYSIS; SCATTERING; SEMIMETALS; SIMULATION