Published December 15, 1984
| Version v1
Journal article
Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs
- 1. Laboratoire de Spectroscopie et d'Optique du Corps Solide, Associe au CNRS No. 232, Universite Louis Pasteur, 5, rue de l'Universite, 67000 Strasbourg, France
Description
A series of fast neutron-irradiated GaAs samples (neutron fluence range of 2 x 1015--2.5 x 1017 cm-2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (approx.1 kG) Lorentzian singlet at groughly-equal2.09 superimposed on the As/sub Ga/ quadruplet. The singlet intensity scales linearly with neutron fluence as does that of the quadruplet. The presence of this new defect has not been reported in as-grown GaAs known to have large concentrations of As/sub Ga/ defects. EPR measurements at 35, 159, and 337 GHz indicate that the singlet linewidth increases with the microwave frequency
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 56
- Journal Issue
- 12
- Series
- J. Appl. Phys.
- Journal Page Range
- 3394-3398
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16057486
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARSENIC; CRYSTAL DEFECTS; DAMAGING NEUTRON FLUENCE; ELECTRON SPIN RESONANCE; GALLIUM ARSENIDES; GHZ RANGE; LINE WIDTHS; NEUTRON DIFFRACTION; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; FREQUENCY RANGE; GALLIUM COMPOUNDS; MAGNETIC RESONANCE; NEUTRON FLUENCE; RADIATION EFFECTS; RESONANCE; SCATTERING; SEMIMETALS