Published June 5, 2012
| Version v1
Journal article
Crystalline to amorphous phase transition of tin oxide nanocrystals induced by SHI at low temperature
Creators
- 1. Department of Physics, R.B.S. College, Agra, U.P., -282 002 (India)
- 2. UGC-DAE CSR, Khandwa Road, Indore, M.P., -452 017 (India)
- 3. Inter-University Accelerator Centre, New Delhi, -110 067 (India)
- 4. Department of Physics, R.B.S. College, Agra, U.P.,-282 002 (India)
Description
Tin oxide (SnO2) thin films were deposited using pulsed laser deposition (PLD) technique on Si substrates. The as-deposited films were irradiated using 100 MeV Ag ions at different fluences ranging from 3x1013 to 3x1014 ions/cm2 at an incidence angle of 75 deg. with respect to surface normal at liquid nitrogen (LN2) temperature. The as-deposited and irradiated films have been characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques to study the modifications in structural and surface morphological properties. Nanocrystalline film become completely amorphous and nanograins of tin oxide disappeared from the surface as indicated by XRD spectra and AFM micrographs respectively.
Additional details
Identifiers
- DOI
- 10.1063/1.4710203;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1447
- Journal Issue
- 1
- Journal Page Range
- p. 715-716
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 56. DAE solid state physics symposium 2011
- Dates
- 19-23 Dec 2011
- Place
- Kattankulathur, Tamilnadu (India)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094244
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; CRYSTALS; ENERGY BEAM DEPOSITION; INCIDENCE ANGLE; ION BEAMS; LASER RADIATION; MODIFICATIONS; MORPHOLOGY; NANOSTRUCTURES; PULSED IRRADIATION; SILICON; SILVER IONS; SUBSTRATES; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; IONS; IRRADIATION; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; SEMIMETALS; SURFACE COATING; TIN COMPOUNDS
Optional Information
- Notes
- (c) 2012 American Institute of Physics