Published June 5, 2012 | Version v1
Journal article

Crystalline to amorphous phase transition of tin oxide nanocrystals induced by SHI at low temperature

  • 1. Department of Physics, R.B.S. College, Agra, U.P., -282 002 (India)
  • 2. UGC-DAE CSR, Khandwa Road, Indore, M.P., -452 017 (India)
  • 3. Inter-University Accelerator Centre, New Delhi, -110 067 (India)
  • 4. Department of Physics, R.B.S. College, Agra, U.P.,-282 002 (India)

Description

Tin oxide (SnO2) thin films were deposited using pulsed laser deposition (PLD) technique on Si substrates. The as-deposited films were irradiated using 100 MeV Ag ions at different fluences ranging from 3x1013 to 3x1014 ions/cm2 at an incidence angle of 75 deg. with respect to surface normal at liquid nitrogen (LN2) temperature. The as-deposited and irradiated films have been characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques to study the modifications in structural and surface morphological properties. Nanocrystalline film become completely amorphous and nanograins of tin oxide disappeared from the surface as indicated by XRD spectra and AFM micrographs respectively.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1447
Journal Issue
1
Journal Page Range
p. 715-716
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
56. DAE solid state physics symposium 2011
Dates
19-23 Dec 2011
Place
Kattankulathur, Tamilnadu (India)

Optional Information

Notes
(c) 2012 American Institute of Physics