Raman spectra of multilayer graphene under high temperatures

For graphitic materials, Raman technique is a common method for temperature measurements through analysis of phonon frequencies. Temperature (T) induced downshift of the bond-stretching G mode (ΔG) is well known, but experimentally obtained thermal coefficients ΔG/ΔT vary considerably between diverse works. Further, ΔG/ΔT coefficients usually were evaluated for relatively low temperatures and found to differ strongly for mono, a few and multilayer graphene. We studied G band behavior in freely suspended multilayer graphene flakes (or graphite nanoflakes) under localized heating by a laser beam. Analysis of Stokes and anti-Stokes signals showed that G band has a complex structure and can be deconvoluted into several peaks that demonstrate distinctly different behavior under heating. A plausible assumption is that these peaks correspond to several groups of graphitic layers (surface, near-surface and bulk) and then different thermal coefficients were determined for these groups. This behavior can be explained by decreasing interaction between surface layers and underlying material at high temperatures that affects especially vibrational properties of a few outermost layers. Estimates of temperatures using anti-Stokes/Stokes intensity ratio (I _aS/I _S) were also done to give results comparable with those obtained from G band downshift, T _ΔG ≈ T _aS/S, supporting the proposed model. The range of temperatures obtained by laser heating, as evaluated by both methods, was from 450 to 1200 K. (paper)