Published August 1993 | Version v1
Journal article

Temperature dependence of radiation damage and its annealing in silicon detectors

  • 1. Los Alamos National Lab., NM (United States)
  • 2. Univ. of California, Santa Cruz, CA (United States). Santa Cruz Inst. for Particle Physics
  • 3. Univ. of California, Riverside, CA (United States)
  • 4. Univ. of Missouri, Rolla, MO (United States)
  • 5. Univ. of New Mexico, Albuquerque, NM (United States)

Description

The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, the authors plan to operate the detectors at reduced temperatures (∼ 0 C). In this paper, they present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 1014/cm2 650 MeV protons. Very pronounced temperature dependencies were observed

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
40
Journal Issue
4 part 1
Journal Page Range
p. 344-348.
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference.
Dates
25-31 Oct 1992.
Place
Orlando, FL (United States).

Optional Information

Secondary number(s)
CONF-921005--.