In situ resistivity measurements of Cu-In thin films during their selenization

The selenization reactions of Cu-In intermetallic layers were monitored by in situ resistivity measurements. The quasi-closed selenization reactor was operated with a continuous flow of nitrogen under atmospheric pressure. Structural investigations of layers at different selenization stages were carried out using X-ray diffraction (XRD), EDX, scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). The structural data are correlated to the in situ resistivity measurements and used to describe the chemical conversion processes