Published September 1989
| Version v1
Journal article
Properties of the surface diffusion and the effects of the surface defects for H on Ni surfaces--EAM studies
Description
The properties of the surface diffusion (SD) and the effects of the surfaces defects are studied using the cluster models and the embedded atom method (EAM). The results show that the activation energies of SD of H on Ni(100),(110) and (111) are 0.152 eV, 0.343 eV and 0.142 eV respectively. An adsorbeded Ni atom on Ni(100) will increase the potential barrier and activation energy for the diffusing H atom across this step, and causing the anisotropy of SD of H on the stepped Ni surface
Additional details
Publishing Information
- Journal Title
- Chinese Journal of Computational Physics
- Journal Volume
- 6
- Journal Issue
- 3
- Series
- Chin. J. Comput. Phys.
- Journal Page Range
- 302-308
- ISSN
- 1001-246X
- CODEN
- JIWUE
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 21084322
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS; S99: GENERAL AND MISCELLANEOUS;
- Descriptors DEI
- ACTIVATION ENERGY; ANISOTROPY; ATOM TRANSPORT; CLUSTER MODEL; DEFECTS; DIFFUSION; EV RANGE; HYDROGEN; NICKEL; SURFACE PROPERTIES
- Descriptors DEC
- ELEMENTS; ENERGY; ENERGY RANGE; MATHEMATICAL MODELS; METALS; NEUTRAL-PARTICLE TRANSPORT; NONMETALS; NUCLEAR MODELS; RADIATION TRANSPORT; TRANSITION ELEMENTS