Published June 1988 | Version v1
Journal article Metadata-only

Doping of gallium arsenide by neutron irradiation at high temperatures

Creators

  • 1. L. Ya. Karpov Scientific-Research Physicochemical Institute, Obninsk (USSR)

Description

An investigation was made of properties of gallium arsenide which was doped by high-temperature irradiation with reactor neutrons. The state and properties of gallium arsenide crystals irradiated with neutrons at high temperatures differed from those of crystals annealed after irradiation at low temperatures (approx-lt 70 degree C). Different irradiation temperatures yielded different spectra of simple and complex defects characterized by different thermal stabilities

Additional details

Publishing Information

Journal Title
Soviet Physics - Semiconductors (English Translation)
Journal Volume
22
Journal Issue
6
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
646-649
ISSN
0038-5700
CODEN
SPSEA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21070808
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Translation
Descriptors DEI
CRYSTAL DOPING; DATA PROCESSING; DEFECTS; GALLIUM ARSENIDES; HIGH TEMPERATURE; MEASURING INSTRUMENTS; MEASURING METHODS; NEUTRONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; USSR
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BARYONS; DEVELOPED COUNTRIES; ELEMENTARY PARTICLES; EUROPE; FERMIONS; GALLIUM COMPOUNDS; HADRONS; MATERIALS; NUCLEONS; PNICTIDES; RADIATION EFFECTS

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (US SR).