Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics
Creators
- 1. Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)
- 2. Display R and D Center, Samsung Display Co., Yongin-city, Gyeongki-do 446–711 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Description
This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.
Additional details
Identifiers
- DOI
- 10.1063/1.4885761;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 1
- Journal Page Range
- p. 013506-013506.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46009574
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CARBON NANOTUBES; CARRIER MOBILITY; EFFICIENCY; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; MAGNESIUM; SILICON NITRIDES; SILICON OXIDES; WATER
- Descriptors DEC
- ALKALINE EARTH METALS; CARBON; CHALCOGENIDES; ELEMENTS; HYDROGEN COMPOUNDS; METALS; MOBILITY; NANOSTRUCTURES; NANOTUBES; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC