Published July 7, 2014 | Version v1
Journal article

Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

  • 1. Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)
  • 2. Display R and D Center, Samsung Display Co., Yongin-city, Gyeongki-do 446–711 (Korea, Republic of)
  • 3. Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

Description

This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
1
Journal Page Range
p. 013506-013506.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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