Published October 1988
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The electronic structure of Ga As1-xPx and Ga Sb1-xPx calculated using the recursion method
Description
The electronic structure calculation of Ga As1-xPx and Ga Sb1-xPx alloys using the recursion method is reported. A five orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states are calculated for Ga, As, Sb and P-sites, in a cluster of 216 atoms, the results are reasonably in good agreement with previous calculations. (author). 12 refs, 8 figs, 1 tab
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20020263.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 17 p.
- Report number
- IC--88/330
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 20020263
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; CRYSTAL LATTICES; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM COMPOUNDS; RECURSION RELATIONS; TERNARY ALLOY SYSTEMS
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; CRYSTAL STRUCTURE