Published February 6, 2015 | Version v1
Journal article

Nanoscale frictional behavior of graphene on SiO2 and Ni(111) substrates

  • 1. CNR, Istituto Nanoscienze—Centro S3 Via Campi 213/a, I-41125 Modena (Italy)
  • 2. Dipartimento di Scienze Fisiche Informatiche e Matematiche (FIM), Università di Modena e Reggio Emilia, Via Campi 213/a, I-41125 Modena (Italy)

Description

Friction characteristics of graphene deposited on different substrates have been studied by atomic force microscopy (AFM). In particular, we compared mechanically exfoliated graphene transferred over Si/SiO2 with respect to monolayer (ML) graphene grown in our laboratory by low temperature chemical vapor deposition on Ni(111) single crystal. Friction force measurements by AFM have been carried out as function of load under different environment conditions, namely vacuum (10−5 Torr), nitrogen and air. The typical decrease of friction force with increasing number of layers has been observed on graphene over Si/SiO2 in all environment including vacuum. Continuum mechanical approximation has been used to analyze the friction versus load curves of ML graphene on Ni(111). Analysis shows that Derjaguin–Mueller–Toporov model is in good agreement with our experimental data indicating that overall behavior of the interface graphene–Ni(111) is relatively rigid respect to out of plane deformations. This result is consistent with the structural characteristics of the interface since graphene grows in registry with Ni(111) surface with covalent bonding character. Finally, the shear strength and the work of adhesion of the two systems with respect to AFM tip in vacuum have been compared. The result of this procedure indicates that shear strength and work of adhesion measured on graphene–Si/SiO2 interface are always greater than those on graphene–Ni(111) interface. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/26/5/055703

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
26
Journal Issue
5
Journal Page Range
[13 p.]
ISSN
0957-4484