Published July 21, 1998
| Version v1
Journal article
About of inelastic channels of protons 30 MeV interaction in formation of complicated complexes of radiation defects in silicon
Description
A role of inelastic interaction in generation of complex radiation defects in silicon by protons irradiation was evaluated. It was shown that the contribution of inelastic channels into the total cross section are close to 40 % for defect formation with a threshold of 25-40 keV under 30 MeV proton influence. (author)
Additional details
Additional titles
- Original title (Russian)
- О вкладе неупругих каналов взаимодействия протонов 30 MehV в образование сложных комплексов радиационных дефектов в кремнии
Publishing Information
- Journal Title
- Doklady Ministerstva Nauki - Akademii Nauk Respubliki Kazakhstan
- Journal Volume
- 6
- Journal Issue
- 3
- Series
- 13 refs., 1 tab.
- Journal Page Range
- p. 21-27
- ISSN
- 1029-8665
INIS
- Country of Publication
- Kazakhstan
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 30037519
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHANNELING; CRYSTAL DEFECTS; IRRADIATION; PROTONS; SILICON; TOTAL CROSS SECTIONS
- Descriptors DEC
- BARYONS; CATIONS; CHARGED PARTICLES; CROSS SECTIONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; NUCLEONS; SEMIMETALS