Published 1988 | Version v1
Book

Optoelectronic material Cd1-chiZnchiTe

  • 1. Brimrose Corp. of America, Baltimore, MD (USA)

Description

Initial interest in II-VI compound Cd1-chiZnchiTe has been due to its suitability as a good substrate material to grow Hg1-chiCdchiTe and Hg1-chiZnchiTe epilayers for building IR focal plane arrays. However, this material has potential applications as optical modulators, IR laser windows, and γ-ray detectors. For all the above-mentioned applications, compositionally and structurally homogeneous Cd1-chiZnchiTe crystals are needed. The present study focuses on the growth of Cd1-chiZnchiTe single crystals. Crystals were grown using a modified Bridgman technique in which both furnace and growth ampoule are kept stationary and the growth is accomplished by controlled cooling of the furnace. The resulting crystals are characterized with respect to their crystallographic perfection using chemical etching. The effect of annealing of the crystals is investigated; suitability of this material for various applications is discussed

Additional details

Additional titles

Subtitle (English)
Growth characterization and applications

Publishing Information

Publisher
SPIE Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (USA)
Imprint Title
Optoelectronic materials, devices, packaging, and interconnects II
Imprint Pagination
262 p.
Series
SPIE - Volume 994.
Journal Page Range
p. 154-159.

Conference

Title
Optoelectronic materials, devices, packaging, and interconnects II.
Dates
6-10 Sep 1988.
Place
Boston, MA (USA).

Optional Information

Secondary number(s)
CONF-8809111--.