Published June 1, 2015 | Version v1
Journal article

Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)

  • 1. Department of Physics, The Ohio State University, 191 West Woodruff Ave., Columbus, Ohio 43210 (United States)
  • 2. Columbus School for Girls, 56 S. Columbia Ave., Columbus, Ohio 43209 (United States)
  • 3. University of Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France)
  • 4. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)
  • 5. Dpto. Ingeniería Electrónica and ISOM, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
  • 6. Dpto. Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain)
  • 7. Department of Materials Science and Engineering, The Ohio State University, 2041 College Road N., Columbus, Ohio 43210 (United States)
  • 8. Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)
  • 9. Department of Electrical and Computer Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210-1272 (United States)

Description

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1−xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors

Additional details

Identifiers

Publishing Information

Journal Title
APL materials
Journal Volume
3
Journal Issue
6
Journal Page Range
p. 062801-062801.6
ISSN
2166-532X
CODEN
AMPADS

Optional Information

Notes
(c) 2015 Author(s)