Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography

Dislocation responsible for leakage current in a halide vapor phase epitaxial (HVPE) (001) β-Ga₂O₃ Schottky barrier diode (SBD) was explored via ultrahigh-sensitive emission microscopy, synchrotron X-ray topography, and scanning transmission electron microscopy (STEM). Light emission due to the reverse leakage current was observed at the dislocation position with a leakage current of -0.98 μA at -100 V. Moreover, the dislocation is visible for the g vectors of 605 and 225; however, it is invisible for 2-bar24 and 10-bar05. The b was determined to be ⫽ <13-bar2> from the g∙b invisible criteria. This dislocation was determined mixed-type. (author)