Published December 1986
| Version v1
Journal article
EXAFS study on radiation induced defects
Description
We report on the application of EXAFS to the study of radiation induced defects in dilute Al(Zn) alloys. By irradiation with 2 MeV electrons at 80 K Al interstitials are created, which are trapped by the Zn solutes. After irradiation the amplitude of the Zn EXAFS is reduced due to the superposition of the regular nearest neighbour distance and a new defect distance. The defect distance was determined to be Rdef = 2.45 A. A comparison with model calculations shows that the Zn atom is located on the octahedral interstitial site after iradiation
Additional details
Publishing Information
- Journal Title
- J. Phys. (Les Ulis), Colloq.
- Journal Volume
- 47
- Journal Issue
- C8-v.2
- Series
- J. Phys. (Les Ulis), Colloq.
- Journal Page Range
- 1045-1048
- ISSN
- 0449-1947
- CODEN
- JPQCA
Conference
- Title
- 4. International conference on EXAFS and near edge structure IV.
- Dates
- 7-11 Jul 1986.
- Place
- Fontevraud (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 18084939
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; ALUMINIUM BASE ALLOYS; ELECTRONS; INTERSTITIALS; LOW TEMPERATURE; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; X-RAY SPECTROSCOPY; ZINC ALLOYS
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; LEPTONS; MEV RANGE; POINT DEFECTS; RADIATION EFFECTS; SPECTRA; SPECTROSCOPY