Published January 29, 1990
| Version v1
Journal article
1/2 left-angle 100 right-angle {100} dislocation loops in a zinc blende structure
Creators
- 1. AT ampersand T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)
Description
We report, for the first time, the identification of extrinsic dislocation loops lying on the {100} planes with 1/2 left-angle 100 right-angle types of Burgers vectors in a zinc blende structure in InGaAsP lattice matched to InP. These dislocation loops generated only in nonradiative recombination assisted point-defect motion process under intensed laser light, and form the left-angle 100 right-angle type dark line defects in degraded 1.3 μm wavelength laser diodes
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 56
- Journal Issue
- 5
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 434-436
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21052522
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DISLOCATIONS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASER RADIATION; PERFORMANCE; SEMICONDUCTOR LASERS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; LINE DEFECTS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS