High energy ion implantation

Physical peculiarities of ion-radial doping under increased ion beam energies are considered. Based on the solution of transport equation for the function of ion distribution by ranges, qualitative characteristics of impurity spatial distributions under boron and phosphorus ion implantation into silicon under the energy of up to 10 MeV are calculated. The role of elastic and inelastic processes during impurity implantation and radiation damage of a crystal under high-energy ion irradiation is considered. Capabilities of high-energy ion implantation method are demonstrated taking doping through openings in masks and creation of concealed and homogeneously doped layers as examples