Hydrogen-decorated lattice defects in proton implanted GaN

Several vibrational bands were observed near 3100cm-1 in GaN that had been implanted with hydrogen at room temperature and subsequently annealed. Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that are decorated by hydrogen. The frequencies are close to those predicted recently for VGa endash Hn complexes, leading us to tentatively assign the new lines to VGa defects decorated with different numbers of H atoms. copyright 1998 American Institute of Physics